V I Characteristics of Diodes Dr. Hari V S Department of Electronics and Communication College of Engineering Karunagappally What You will Learn You will plot the V-I characteristics of Si and Ge diodes and understand the difference in cut in voltage and slope of the characteristics. Theory Semiconductor diode is a $p-n$ junction that conducts well on forward bias and conducts very little on reverse bias. The relation between diode current and voltage is \begin{equation}\label{diodeeqcurrent} I=I_{o}[e^{\frac{V_{D}}{\eta V_{T}}}-1] \end{equation} where $I_{o}$ is the reverse saturation current, $V_{D}$ is the voltage across the diode and $V_{T}=\frac{kT}{q}$. $k$ is the Boltzmann constant and $T$ is the absolute temperature. The ideality factor $\eta$ varies from $1$ to $2$. Experiment - Forward Characteristics Qucs is launched and the components in the schematic, shown below, are entered into the editor. A Si diode ...