Output Characteristics of n - Channel MOSFET

Dr. Hari V S
Department of Electronics and Communication
College of Engineering Karunagappally

Objectives

• To plot the output characteristics of n- channel MOSFET.
• To compute the drain resistance

Experiment

• Output characteristics indicate the variation of the drain current ($I_{D}$) with the drain to source voltage ($V_{DS}$) for different gate to source voltages ($V_{GS}$).
• Wire up the ciruit in QUCS schematic editor as shown below.

Run the simulations and observe the output characteristics as shown below.

Select a characteristics and draw a tangent in the saturation region and compute the drain resistance as \begin{equation} r_{d}=\frac{\Delta V_{DS}}{\Delta I_{D}} \end{equation} for the given $V_{GS}$

Observations

Drain resistance = $\ldots\ldots\ldots\ldots\ldots\ldots\ldots\ldots\,\Omega$

What You Learned

You understood the output characteristics of $n-$ channel MOSFET.